Abstract
The performance of organic field-effect transistors (OFETs) fabricated utilizing vacuum deposited n-type conjugated molecule N,N’-Dioctadecyl-1,4,5,8-naphthalenetetracarboxylic diimide (NDIOD2) were investigated using single and bilayer dielectric system over a low-cost glass substrate. Single layer device structure consists of Poly (vinyl alcohol) (PVA) as the dielectric material whereas the bilayer systems contain two different device configuration namely aluminum oxide/Poly (vinyl alcohol) (Al2O3/PVA) and aluminum oxide/Poly (methyl mefhacrylate) (Al2O3/PMMA) in order to reduce the operating voltage and improve the device performance. It was observed that the devices with Al2O3/PMMA bilayer dielectric system and top contact aluminum electrodes exhibit excellent n-channel behaviour under vacuum compared to the other two structures with electron mobility value of 0.32 cm2/Vs, threshold voltages ~1.8 V and current on/off ratio ~104, operating under a very low voltage (6 V). These devices demonstrate highly stable electrical behaviour under multiple scans and low threshold voltage instability in vacuum condition even after 7 days than the Al2O3/PVA device structure. This low operating voltage, high performance OTFT device with bilayer dielectric system is expected to have diverse applications in the next generation of OTFT technologies.
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