Polymer Electret Improves the Performance of the Oxygen-Doped Organic Field-Effect Transistors

Abstract

Chemical doping is widely used in the electronic devices. In p-type semiconductor thin films, oxygen doping fills the hole traps and increases hole concentrations, improving the performance of the organic field-effect transistors (OFETs). Due to the low ionization potential for p-type semiconductors, the superfluous holes induced by the oxygen doping degrades the OFETs off-state leakage performance. On the other hand, for p-type semiconductors with high ionization potential (up to 5.5-6.0 eV), the limited oxidation of oxygen is hard to achieve satisfactory doping concentrations to fill the trap states. This refers to the well-known intrinsic incompatibility between the oxygen doping and high-performance OFETs. Herein, a novel strategy is introduced to overcome the incompatibility and achieve high-performance OFETs by using the structural polymer electret. That is, moderate hole concentrations induced by low-pressure (30 Pa) oxygen plasma fill the hole traps within semiconductor. And the built-in field resulted from polymer electret accumulates the holes inside semiconductor near the semiconductor/electret interface, thus improving the OFETs performance. Using a model organic semiconductor with high ionization potential-2,7-didodecyl[1]benzothieno [3,2-b][1]benzothiophene (C12-BTBT) as an example, the high-performance OFETs with field-effect mobility ( $\mu _{FET}$ ) of 3.5 cm2V−1 s−1, subthreshold-swing ( SS ) of 110 mV decade−1, on-off ratio of 104, and widely-tunable threshold voltage ( ${V} _{t}$ ) are realized at a low voltage below 2 V in the open air.