Abstract
In this work, we present the development of low consumption quantum cascade lasers across the mid-IR range. In particular, short cavity single-mode lasers with optimised facet reflectivities have been fabricated from 4.5 to 9.2 μm. Threshold dissipated powers as low as 0.5 W were obtained in continuous wave operation at room temperature. In addition, the beneficial impact of reducing chip length on laser mounting yield is discussed. High power single-mode lasers from the same processed wafers are also presented.
Highlights
In the recent years, significant improvement has been made in the development of efficient high power quantum cascade lasers [1]
We present the development of low consumption quantum cascade lasers across the mid-IR range
Threshold dissipated powers as low as 0.5 W were obtained in continuous wave operation at room temperature
Summary
Significant improvement has been made in the development of efficient high power quantum cascade lasers [1]. This effort has led to multi-watt emission from quantumcascade lasers (QCL) using devices that can consume up to 20-50 W of electrical power [2]. These devices have an important impact on many applications, e.g. counter-measures, photoacoustic spectroscopy or cavity ring-down spectroscopy. Optimizing the chip length and the facet reflectivity rather than active region or grating design, allows to fabricate both low dissipation devices and high optical power devices at the same time
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