Abstract
AbstractHere we report a simple and fast annealing method to prepare MAPbI3 perovskite active film for an inverted planar solar cell. The annealing process includes suspended annealing followed by contact annealing; the optimized annealing temperature is 90 °C. The MAPbI3 perovskite film shows improved crystallization and larger grain size after annealing at 90 °C. Furthermore, the MAPbI3 perovskite cell electrode deposition and efficiency test are performed in ambient air, and a high PCE of 17.12% are achieved when the annealing temperature is 90 °C. The results indicate that a high efficiency MAPbI3 perovskite solar cell can be realized by a simple annealing process with convenient equipment requirements.
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