Abstract
InP/In/sub 0.53/Ga/sub 0.47/As/InP double heterojunction bipolar transistors (HBTs) were grown on GaAs substrates. A 140 GHz power-gain cutoff frequency f/sub max/ and a 207 GHz current-gain cutoff frequency f/sub /spl tau// were obtained, presently the highest reported values for metamorphic HBTs. The breakdown voltage BV/sub CEO/ was 5.5 V, while the dc current gain /spl beta/ was 76. High-thermal-conductivity InP metamorphic buffer layers were employed in order to minimize the device-thermal resistance.
Sign-in/Register to access full text options 
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Schedule a callDisclaimer: All third-party content on this website/platform is and will remain the property of their respective owners and is provided on "as is" basis without any warranties, express or implied. Use of third-party content does not indicate any affiliation, sponsorship with or endorsement by them. Any references to third-party content is to identify the corresponding services and shall be considered fair use under The CopyrightLaw.
