Abstract
High-performance MOCVD-grown N-p-N InP/GaAsSb/InP DHBTs based on epitaxial layers deposited on 100 mm InP substrates are reported. The transistors feature the first nearly ideal emitter/base junction characteristics reported for material grown using AsH 3 and PH 3 hydride precursors, a DC current gain β=30–40, and a peak cutoff frequency f T=245 GHz for a 0.5×12 μm 2 emitter fabricated on a 250 Å lattice-matched carbon-doped base. We discuss layer composition and thickness uniformity, C-doping efficiency as determined by the comparison of SIMS and Hall effect data on bulk GaAs 0.5Sb 0.5 layers, as well as provide SIMS and TEM data for the transistor layers (including a lattice image of the interface between GaAsSb and InP). To our knowledge, the present article provides the first detailed characterization of high-speed InP/GaAsSb/InP DHBTs fabricated on industrially grown epitaxial layers.
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