Abstract
High-performance MOCVD-grown N-p-N InP/GaAsSb/InP DHBTs based on epitaxial layers deposited on 100 mm InP substrates are reported. The transistors feature the first nearly ideal emitter/base junction characteristics reported for material grown using AsH3 and PH3 hydride precursors, a DC current gain β=30–40, and a peak cutoff frequency fT=245 GHz for a 0.5×12 μm2 emitter fabricated on a 250 Å lattice-matched carbon-doped base. We discuss layer composition and thickness uniformity, C-doping efficiency as determined by the comparison of SIMS and Hall effect data on bulk GaAs0.5Sb0.5 layers, as well as provide SIMS and TEM data for the transistor layers (including a lattice image of the interface between GaAsSb and InP). To our knowledge, the present article provides the first detailed characterization of high-speed InP/GaAsSb/InP DHBTs fabricated on industrially grown epitaxial layers.
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