Abstract
A new i-In0.49Ga0.51P/n-InxGa1-xAs/i-GaAs step-compositioned doped-channel field-effect transistor (SCDCFET) has been fabricated and studied. Owing to the presence of a V-shaped energy band formed by the step-compositioned doped-channel structure, a large current density, a large gate voltage swing with high average transconductance and a high breakdown voltage are obtained. For a 1 × 80 µm2 gate dimension, a maximum drain saturation current of 830 mA/mm, a maximum transconductance of 188 mS/mm, a high gate breakdown voltage of 34 V, and a large gate voltage swing of 3.3 V with transconductance > 150 mS/mm are achieved. These performances show that the studied device has a good potentiality for high-speed, high-power, and large input signal circuit applications.
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