Abstract
Depletion-MIS-like GaAs/In 0.25Ga 0.75As/GaAs delta-doped heterostructure field effect transistors (HFETs) have been successfully grown by low-pressure metalorganic chemical vapor deposition (LP-MOCVD). Hall mobilities as high as 5600 (22000) and 3920 (18400) cm 2/V.s with sheet carrier densities of 2 (1.8) and 4.3 (2.5) × 10 12 cm −2 for single and double delta-doped structures at 300 (77) K, respectively are achieved. Breakdown voltages as high as 26 V for single and 16 V for double delta-doped structures are obtained. Meanwhile, the structures in this work reveal improved gate voltage swings. By virtue of the photoluminescence (PL) spectra, most of the carriers transferring from the delta-doped layer to the InGaAs channel at zero gate bias are found. Negative differential resistance (NDR) phenomena under illumination which degrades the transconductances are also observed and discussed.
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