Abstract
A process technology for a pseudomorphic high electron mobility transistor (P-HEMT) with an offset-gate structure has been developed for millimeter-wave monolithic microwave ICs (MMICs). A HEMT with the offset-gate structure showed both reduced gate-to-drain capacitance and drain conductance compared with a device with a non-offset-gate structure. The device showed a maximum available gain (MAG) of 9 dB at 77 GHz. The device was applied to a 77 GHz three-stage power amplifier, which showed a small-signal gain of 16.5 dB. Under preliminary life testing, this amplifier showed a stable small-signal gain for over 160 hours of testing at 175°C.
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Schedule a callDisclaimer: All third-party content on this website/platform is and will remain the property of their respective owners and is provided on "as is" basis without any warranties, express or implied. Use of third-party content does not indicate any affiliation, sponsorship with or endorsement by them. Any references to third-party content is to identify the corresponding services and shall be considered fair use under The CopyrightLaw.
