Abstract
This paper proposed a photodetector with a dual-injection structure. Input power is splitted into two beams by a 3 dB beam splitter at the incident end and then coupled into the photodetector, which can make the light field distribution in the germanium absorption layer more uniform. With the same active area structure, the responsivity of the dual-injection structure can be increased by 45.73% at 108.33 mW, the saturated optical power could be induced by 44.76%, and the bandwidth can be improved by 6.74 GHz at 20 mW comparing with the single-injection structure. The dual-injection structure improves the performance of the device without increasing the complexity.
Highlights
SILICON photonics has attracted extensive research interest because of the compatibility with CMOS (Complementary Metal-Oxide-Semiconductor) process, easy integration, low cost, compact size, and low power consumption [1,2,3,4,5]
We proposed a Ge-on-Si photodetector with a novel waveguide structure, the dual-injection structure
The performance advantages are more obvious under a large incident optical power
Summary
SILICON photonics has attracted extensive research interest because of the compatibility with CMOS (Complementary Metal-Oxide-Semiconductor) process, easy integration, low cost, compact size, and low power consumption [1,2,3,4,5]. It has shown great application value in data center, communication, sensing, high-performance computing and artificial intelligence area [6,7]. Benefitted from the more uniform light field distribution, this novel structure can overcome some defects in the traditional single-injection one and shows improved performance.
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