High-Performance GaN Vertical Schottky Barrier Diode With Self-Alignment Trench Structure

Abstract

In this work, high-performance GaN vertical Schottky barrier diodes (SBDs) are successfully fabricated on the GaN-on-GaN substrate by using the self-alignment trench structure and argon (Ar) ion implantation. The fabricated diodes achieve a high current ON/ OFF ratio of 10 <sup xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">8</sup> and high breakdown voltage (BV) of 656 V due to the reduced surface electric field effect. Besides, the temperature-dependent reverse leakage characteristics show that two Poole–Frenkel emission (PFE) processes dominate the carrier transport. This work shows great potential of the self-alignment trench structure in fabricating GaN vertical SBDs to improve the BV with simply fabrication process.