Abstract
This paper reports on a high-voltage vertical GaN Schottky barrier diode (SBD) using fluorine (F) ion implantation treatment. Compared with the GaN SBD without F implantation, this SBD effectively enhanced the breakdown voltage from 155V to 775V and significantly reduced the reverse leakage current by 105 times. These results indicate that the F-implanted SBD showed improved reverse capability. In addition, a high Ion/Ioff ratio of 108 and high Schottky barrier height of 0.92 eV were also achieved for this diode with F implantation. The influence of F ion implantation in this SBD was also discussed in detail. It was found that F ion implantation to GaN could not only create a high-resistant region as effective edge termination but be employed for adjusting the carrier density of the surface of GaN, which were both helpful to achieve high breakdown voltage and suppress reverse leakage current. This work shows the potential for fabricating high-voltage and low-leakage SBDs using F ion implantation treatment.
Highlights
It has been found that electric field crowding occurs at the edge of Schottky contact, and edge termination technique could distribute electric field to achieve high breakdown voltage
The thickness of the n--Gallium Nitride (GaN) epilayer was about 8.4 μm checked by crosssectional CL images as shown in Fig. 1(e), taking advantage of the image contrast caused by different carrier density
Ti (50nm)/Pt (100nm)/Au (50nm) Ohmic contacts were deposited by e-beam evaporation at the backside of GaN bulk substrates treated by inductively coupled plasma (ICP) etching
Summary
It has been found that electric field crowding occurs at the edge of Schottky contact, and edge termination technique could distribute electric field to achieve high breakdown voltage. High-voltage vertical GaN-on-GaN Schottky barrier diode using fluorine ion implantation treatment
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