High-performance GaAs metal-insulator-semiconductor field-effect transistors enabled by self-assembled nanodielectrics

Abstract

High-performance GaAs metal-insulator-semiconductor field-effect-transistors (MISFETs) fabricated with very thin self-assembled organic nanodielectrics (SANDs), deposited from solution at room temperature, are demonstrated. A submicron gate-length depletion-mode n-channel GaAs MISFET with SAND thicknesses ranging from 5.5to16.5nm exhibit a gate leakage current density <10−5A∕cm2 at a gate bias smaller than 3V, a maximum drain current of 370mA∕mm at a forward gate bias of 2V, and a maximum intrinsic transconductance of 170mS∕mm. The importance of appropriate GaAs surface chemistry treatments on SAND/GaAs interface properties is also presented. Application of SANDs to III-V compound semiconductors affords more opportunities to manipulate the complex III-V surface chemistry with broad materials options.