Abstract
The present work outlines the synthesis of e-beam deposited (Sn2Sb2S5)GO:FTO thin film. The surface and physicochemical characterization of the thinfilm was done through X-ray diffraction (XRD), X-ray photoelectron spectroscopy, Fourier transform infrared spectroscopy, scanning electron microscopy, energy dispersive X-ray and UV-visible spectrophotometry. An orthorhombic phased Sn2Sb2S5-GO was confirmed by XRD with crystallite size of 16.9 nm. SEM morphology revealed homogenous distribution of grains and sheet-like structure of graphene oxide (GO) and a direct band gap of 2.9 eV. Moreover, electrical investigation presented (Sn2Sb2S5)GO:FTO as an excellent electrode material with 303 F g−1 specific capacitance. The photocatalytic degradation rates by the thinfilm for methyl red dye, pesticide and phenol were 70%, 94% and 54%. The dynamic properties of the investigated film present it as a propitious material for opto-electrical and remediation devices.
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