Abstract
High-performance fully transparent bottom-gate type dual-layer (ITO/TZO) channel thin-film transistors (ITO/TZO TFTs) have been successfully fabricated on a glass substrate at low temperature (below 100°C). The results show that dual-layer channel (ITO/TZO) TFTs, compared to the single channel TZO TFTs and ITO TFTs, exhibit better electrical properties, with a low I off of 1.5 × 10−11 A, a high on/off ratio of 5.78 × 107, a high saturation mobility μ s of 292 cm2/V·s, a high linear mobility μ l of 105.4 cm2/V·s, a steep subthreshold swing of 0.33 V/decade and a threshold voltage V th of 3.16 V. The results show that excellent device performance can be realised in ITO/TZO TFTs.
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