Abstract
Diamond, which possesses an ultra-wide bandgap, high thermal conductivity, and super thermal and chemical stability, is a promising material for deep-ultraviolet optoelectronics. However, it is still difficult for diamond photodetectors to meet the requirements of practical applications due to their relatively low responsivity. Here, we demonstrate a high-performance diamond photodetector realized via Schottky barrier modulation. Defect states and hydrogen terminals are introduced onto the surface of the diamond by hydrogen plasma treatment. Under illumination, photon-generated electrons are trapped by the defect states at the surface of the diamond, which lowers dramatically the Schottky barrier height, leading to high photocurrent of the photodetector. As a result, our device exhibits a responsivity of 524.9 A/W, a gain of 2958, and a detectivity of 3.42 × 1015 cm Hz1/2 W−1, all of which are among the highest values ever reported for diamond-based photodetectors. Thus, our results suggest a novel strategy for design and fabrication of high-performance diamond photodetectors.
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