Abstract
The classical Schottky barrier is introduced. The Schottky approximation is initially used with parameters listed and F(x) and Ψ(x) are given. The zero current solution for n(x). Diffusion potential and junction field is given. The Debye length and barrier width are defined. The accuracy of the Schottky approximation is discussed. n(x) for non vanishing currents are evaluated. The Dobson integral is given. The Boltzmann term is shown to be independent of the current. Current voltage characteristics are calculated. A modified Schottky barrier is introduced. Schottky barrier with current dependent Interface density is identified. Metal/semiconductor boundary conditions are given. Richardson-Dushman emission is identified. Current voltage characteristic in modified Schottky barriers are computed. The ideal diode equation is given. The shape factor is given. DRO and DO ranges are identified. A modified Boltzmann range is shown. Electrostatic and electrochemical potential in the Schottky barrier are identified.
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