High-performance CuO nanowire printed devices for visible light sensing and switching characteristics

Abstract

CuO nanowires (NWs) were synthesized by thermal oxidation of Cu wire in a muffle furnace. The furnace was set to 600 ˚C for 24 h to obtain a high aspect ratio NWs (400–700), with good crystallinity and negligible impurities. Further, CuO NWs were transferred to the silicon substrate to form a two-terminal, single nanowire device using contact printing. The fabricated devices exhibit good photocurrent, response, and recovery time (<50 ms). Also, the printed devices were analyzed at various bias voltages to explore the switching characteristics.