High‐performance charge plasma based normally OFF GaN MOSFET

Abstract

A high-performance enhancement-mode charge plasma based gallium nitride (CP-GaN) MOSFET is stimulated. Here, metals of same work functions are used to induce n - type charge plasma in an undoped GaN film to realise source and drain regions of a GaN MOSFET. The proposed device is not heterostructure like the conventional GaN/AlGaN devices and is hence free from hetero-epitaxial defects and inverse piezoelectric effects, and can have reduced leakage and can be more reliable. An extensive simulation study has revealed that the proposed CP-GaN device exhibits a threshold voltage of 1.4 V, large I ON / I OFF ratio of 10 8 and transconductance ( g m ) of 308 mS/mm.