Abstract
Nano-photodetectors were constructed from n-type ZnSe nanoribbons (NRs) with controlled gallium doping, and the device performances were systematically studied. The ZnSe:Ga NR photodetectors show spectral sensitivity in the blue-light range with high photo-to-dark current ratio (>103) and fast response speed (<0.1 s), which also function with excellent stability and reproducibility. The photoconductivity of the ZnSe NRs is greatly enhanced by Ga doping. The responsivity and photoconductive gain of the ZnSe:Ga NRs have substantially increased compared with the intrinsic ZnSe NRs. It is expected that the ZnSe:Ga NRs will have important applications in the future nano-optoelectronics as high-sensitive blue-light nano-photodetectors.
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