Gate-controllable photoresponse of nitrogen-doped p-type ZnSe nanoribbons top-gate FETs

Abstract

Nitrogen-doped p-type ZnSe nanoribbons (NRs) were successfully synthesized by a chemical vapor deposition (CVD) method. High-performance field-effect transistors (FETs) based on individual ZnSe NRs with high-κ Si3N4 dielectric and top-gate geometry were constructed. In contrast to the nano-FETs with back-gate configuration and SiO2 dielectric, the top-gate FETs exhibit a substantial improvement in device performances, such as threshold voltage was reduced to a small value of 1.9V, the transconductance, hole mobility and Ion/Ioff ratio were increased to 864nS, 10.4cm2V−1s−1 and 106, respectively. Moreover, the top-gate ZnSe NR FET showed good controllability of photoresponse with fast response speed less than 0.1s and high Ilight/Idark ratio up to 105, revealing that they are promising candidates for nano-electronic and optoelectronic applications.