Abstract
A new approach for implementation of implant free In0.53Ga0.47As/InAs/In0.53Ga0.47As composite delta-doped stepped poly gate MOSFET is one of the challenging devices due to their inherent advantages of large electron mobility as a comparison with conventional bulk MOSFETs. The minimization of the defect density and border traps at the channel interface, due to the InP layer is one of the attractive features of this proposed buried channel MOSFET. So, the channel mobility will be very high due to a high thermally stable oxide semiconductor interface. As results, low leakage current is observed. Further, the proposed device offers a high driving current in extending to the low energy bandgap due to the addition of the delta-doped layer in the channel region. In this work, the electrostatic behavior along with the RF and linearity performance of 15 nm gate length stepped poly gate In0.53Ga0.47As/InAs/In0.53Ga0.47As buried composite channel using delta layer is investigated using 2D TCAD tool. The comparison has been done between stepped poly gate (SG) MOSFET and composite delta (δ) doped stepped poly gate (CDSG) MOSFET, to validate the advantages of the proposed structure for the realization of low power and high frequency applications.
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