High performance and illumination stable In2O3 nanofibers-based field effect transistors by doping praseodymium

Abstract

Although different kinds of one dimensional (1D) metal oxide nanofibers (MO-NFs) based field effect transistors (FETs) have been developed in recent years, their intrinsic deficiency in illumination instability are not addressed yet, which further prevented their application in practical life. In this work, due to the outstanding performance of suppressing oxygen vacancies and the blue light down-conversion with low charge transfer transition energy, praseodymium (Pr) is demonstrated an ideal candidate to dope into In2O3 NFs for both transferring the depletion mode to the enhancement mode and enhancing the illumination stability of the FETs. The optima In2O3 NFs-based FET was achieved by doping with 3 mol% Pr and exhibited an excellent electrical performance with a carrier mobility of 6.92 cm2V−1s−1, an on/off current ratio of ∼5.4 × 107, threshold voltage of 5.2 V, and subthreshold swing of 0.37 V/dec. Moreover, the FETs exhibited good illumination stability under 3600 s negative gate bias stress test with illumination (NBIS). Finally, the FET was also used as a switch to bright the LED in this work, demonstrating its great promise of Pr-doped In2O3 NFs in future one-dimensional electronic devices.