High performance and high reliability polysilicon thin-filmiyansistors with multiple nano-wire channels

Yung-Chun Wu Yung-Chun Wu,Ya-Hsiang Tai Ya-Hsiang Tai,Simon Min Sze Simon Min Sze,Ting-Chang Chang Ting-Chang Chang,Po-Tsun Liu Po-Tsun Liu,Chun-Yen Chang Chun-Yen Chang,Chi-Shen Chen Chi-Shen Chen,Chun-Hao Tu Chun-Hao Tu,Hsiao-Wen Zan Hsiao-Wen Zan

doi:10.1109/iedm.2004.1419289

High performance and high reliability polysilicon thin-filmiyansistors with multiple nano-wire channels

Yung-Chun Wu Yung-Chun Wu, Ya-Hsiang Tai Ya-Hsiang Tai + Show 7 more

https://doi.org/10.1109/iedm.2004.1419289

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Publication Date: Dec 13, 2004

Citations: 9

Affiliation: National Yang Ming Chiao Tung University, National Applied Research Laboratories, National Sun Yat-sen University

#Multiple Nano-wire Channels #Steep Subthreshold Slope + Show 8 more

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Abstract

We have investigated the lightly-doped drain (LDD) polysilicon thin-film transistors (poly-Si TFTs) with a series of multi-channel with different widths. The ten 67 nm-wide split channels TFT has best gate control due to its tri-gate structure, and has lowest poly-Si grain boundary defects, which were passivated by NH/sub 3/ plasma effectively due to its split nano-wires structure. The proposed TFT exhibits high performance electrical characteristics, such as a high ON/OFF current ratio (> 10/sup 9/), a steep subthreshold slope (55) of 137 mV/decade, an absence of drain-induced barrier lowering (DIBL), suppressed kink-effect, and superior reliability.

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