Abstract
The electrical performance of organic field-effect transistors (organic FETs or OFETs) based on the soluble semiconductor regioregular poly(3-hexylthiophene) (P3HT) with a top-gate configuration is investigated. P3HT FETs with the top-gate configuration show that field-effect mobility is independent of substrate surface energy and are comparable to bottom-gate P3HT FETs with hydrophobic surface passivations on SiO2 gate insulators. Gate bias stress experiments reveal a high electrical stability with negligible hysteresis and small threshold voltage shifts in top-gate devices with different polymer gate insulators, which is comparable or superior to that of hydrogenated amorphous silicon thin film transistors.
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