High-Performance Amorphous InGaZnO Thin Film Transistor With High-k Van Der Waals Molecular Dielectric

Abstract

We report the amorphous Indium-Gallium-Zinc-Oxide (In:Ga:Zn = 2.8:9.6:1) thin film transistors (TFTs) using an inorganic molecular insulating dielectric of antimony trioxide (Sb2O3). Due to dangling-bond-free interface nature of the van der Waals (vdW) bonded interaction, the TFTs show robustly enhanced field-effect mobility ( <inline-formula xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink"> <tex-math notation="LaTeX">$\mu _{\!\textit {FE}}$ </tex-math></inline-formula> ) up to 45 cm2V−1s−1, in addition with occurance of bandlike transport. Importantly, ideal onset speed with subthreshold swing (SS) down to 70 mV/dec was achieved, demonstrating the suppression of interface defects which can be further illustrated by the superior bias stress stability under positive gate-bias stress (PBS), with only 12 mV threshold voltage shift at applying gate bias with 3 V for 4000 s. The homogeneous performance of a series of devices processed exhibit excellent stability and reliability.