High Performance Amorphous IGZO Thin-Film Transistor Based on Alumina Ceramic

Lei Zhang,Qiulin Tan,Qianqian Guo,Zhihong Fan,Jijun Xiong

doi:10.1109/access.2019.2960562

Lei Zhang, Qiulin Tan + Show 3 more

Open Access

https://doi.org/10.1109/access.2019.2960562

Copy DOI

Journal: IEEE Access	Publication Date: Jan 1, 2019
Citations: 14	License type: CC BY 4.0

Affiliation: North University of China

Abstract

Ceramic materials are high-temperature resistant materials with promising prospects. In some applications, semiconductor devices need to be integrated with a ceramic substrate. Herein, we report on the stable operation of an Al 2 O 3 ceramic-based amorphous-Indium gallium zinc oxide (a-IGZO) thinfilm transistor (TFT) at room temperature up to 523 K. Scanning electron microscopy (SEM) and X-ray photoelectron spectroscopy (XPS) were used to characterize the a-IGZO film. A mixed solution was printed on the surface of an insulating layer of alumina. After the combustion reaction, the metal electrode was printed on the surface of a-IGZO to obtain a TFT. The ION/IOFF ratio was 6.04 × 10 6 at 293 K, and it was maintained at 1.44 × 10 5 at 523 K. It was demonstrated that the parameters of a-IGZO TFTs such as the subthreshold swing (SS), g m and μ sat changed at different temperatures. As such, they can be used as building blocks for integrated circuits that can operate at high temperatures. The fabrication of TFT-based inverters, NAND and NOR gate circuits facilitate the exploration of the possibility of more complex digital circuits that operate at high temperatures, based on hybrid circuit design.

Highlights

Thin-film transistors (TFTs) are the fundamental building blocks of advanced flat panel displays (FPDs) that are extensively used in consumer electronic products such as smartphones, portable laptops, and wearable devices [1]–[6]
The results revealed that alumina ceramics-based amorphous-Indium gallium zinc oxide (a-IGZO) TFTs still exhibit logic functions at high temperatures
In the TFT device, the semiconductor plays an important role as an active layer

Summary

Introduction

Thin-film transistors (TFTs) are the fundamental building blocks of advanced flat panel displays (FPDs) that are extensively used in consumer electronic products such as smartphones, portable laptops, and wearable devices [1]–[6]. IGZO is a high-performance material for TFT semiconductor layers [17], [18] because of its high electron mobility, simple manufacturing process, robust stability and uniformity [19]–[22]. The characteristic parameters of the TFT such as the IDS−VGS and ION/IOFF ratio, SS, μ and gm were measured at different temperatures.

Results

Conclusion