Abstract
The performance of surface-emitting visible AlGaInP light-emitting diodes (LEDs) is described. The devices have external quantum efficiencies greater than 2% and luminous efficiencies of 20 lm/A in the yellow (590 nm) spectral region. This performance is roughly ten times better than existing yellow LEDs and is comparable to the highest performance red AlGaAs LEDs currently available. The devices also perform favorably compared to existing devices in the orange and green spectral regions. Low-pressure organometallic vapor phase epitaxy (OMVPE) is used to grow the epitaxial layers. The devices consist of a double heterostructure with an AlGaInP active region grown on a GaAs substrate.
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