Abstract
We report a high-performance active image sensor pixel design by utilizing amorphous-indium-gallium-zinc-oxide (a-IGZO) thin-film transistors (TFTs) with a circular structure. The TFT, configured with the inner electrode as source and outer electrode as drain, typically exhibits good saturation electrical characteristics, where the device has a constant drive current despite variations in drain voltage. Due to the very high output resistance exhibited by this asymmetric TFT structure with a circular shape, the pixel circuit considered here in common-drain configuration provides a higher gain of operation than a pixel circuit implemented with rectangular a-IGZO TFTs. They can be used as driving TFTs in active image sensor circuits. They are, therefore, good candidates for digital X-ray detectors in applications such as medical diagnostic procedures.
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