Abstract
The first strained InGaP/InGaAlP quantum well lasers emitting at 634 nm are reported. High optical power exceeding 600 mW and low threshold current density of 1.7 kA/cm2 were obtained with 20 μm wide broad stripe lasers with uncoated facets. This power and threshold current density are believed to be the best reported to date for diode lasers emitting near 630 nm.
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