Abstract
By quantitative secondary ion mass spectroscopy (SIMS) analyses, oxygen and carbon contents in GaAs epitaxial layers grown by molecular beam epitaxy (MBE) were found to increase significantly when the growth temperature was reduced below a critical value at about 450 °C. The concentrations of oxygen and carbon in GaAs epilayers grown below the critical temperature were about 4×1017 cm−3 and 3×1016 cm−3, respectively. Meanwhile, impurity accumulation during growth interruption became faster resulting in even higher interfacial impurity concentrations. Oxygen and carbon will affect the electrical properties of the GaAs epilayers, especially those grown between 350 °C and 450 °C where defects related to excess As may not be dominating.
Sign-in/Register to access full text options 
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Schedule a callDisclaimer: All third-party content on this website/platform is and will remain the property of their respective owners and is provided on "as is" basis without any warranties, express or implied. Use of third-party content does not indicate any affiliation, sponsorship with or endorsement by them. Any references to third-party content is to identify the corresponding services and shall be considered fair use under The CopyrightLaw.
