High output power GaN-based light-emitting diodes using an electrically reverse-connected p-Schottky diode and p-InGaN–GaN superlattice

Abstract

We demonstrate the high-performance and excellent reliability characteristics of InGaN–GaN light-emitting diodes (LEDs) using an electrically reverse-connected p-Schottky diode and p-InGaN–GaN superlattice (SL). Measurements show that the LED with the Schottky diode and SL yields lower series resistance and higher output power compared to normal LEDs. In addition, the device degradation rate of the proposed LED is 33 times as low as that of the normal LED at high electrical stress of 410 A/cm2, indicating excellent reliability behavior. These results mean that the use of p-Schottky diode and p-SL is very promising for the realization of high-performance GaN-based LEDs.