Abstract
An active frequency doubler monolithic microwave integrated circuit (MMIC) for E-band transceiver applications is presented in this letter. This MMIC has been fabricated in a commercial 0.1- ㎛ GaAs pseudomorphic high electron mobility transistor (pHEMT) process on a 2-mail thick substrate wafer. The fabricated MMIC chip had been measured to have a high output power performance of over 13 dBm with a high fundamental leakage suppression of more than 38 dBc in the frequency range of 71 to 86 GHz under an input signal condition of 10 dBm. A microstrip coupled line is used at the output circuit of the doubler section to implement impedance matching and simultaneously enhance the fundamental leakage suppression. The fabricated chip is has a size of 2.5 mm X 1.2mm.
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