Abstract
In this paper, we demonstrated a 4W power amplifier monolithic microwave integrated circuit (MMIC) for Ku-band satellite communication applications. The used device technology relies on 0.25mm GaAs pseudomorphic high electron mobility transistor (PHEMT) process. The 4W power amplifier MMIC has linear gain of over 30 dB and saturated output power of over 36.1 dBm in the frequency range of 13.75 GHz ~ 14.5 GHz. Power added efficiency (PAE) is over 30 %.
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More From: JSTS:Journal of Semiconductor Technology and Science
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