Abstract

When an intense THz field at frequency fTHz is applied to excitons resonantly created in bulk GaAs by a near infrared laser at frequency fNIR, sidebands are observed at frequencies fsideband = fNIR + 2nfTHz, where n is an integer. At temperature T = 10 K, sidebands of order −4 ≤ 2n ≤ 16 are observed. Sidebands up to 10th order persist at 170 K.

Full Text
Paper version not known

Talk to us

Join us for a 30 min session where you can share your feedback and ask us any queries you have

Schedule a call

Disclaimer: All third-party content on this website/platform is and will remain the property of their respective owners and is provided on "as is" basis without any warranties, express or implied. Use of third-party content does not indicate any affiliation, sponsorship with or endorsement by them. Any references to third-party content is to identify the corresponding services and shall be considered fair use under The CopyrightLaw.