Abstract
We extend our work on the use of digitally controlled pulsed laser plasma deposition (PLPD) technique to synthesize high quality, 2-dimensional single crystalline boron nitride nanosheets (BNNSs) at a low substrate temperature for applications in high-performance deep UV photodetectors. The obtained sample consists of a large amount of BNNSs partially overlapping one another with random orientations. Each sheet is composed of a few (from 2 to 10) stacked atomic layers exhibiting high transparency due to its highly ordered hBN crystallinity. Deep UV detectors based on the obtained BNNSs were designed, fabricated, and tested. The bias and temperature effects on the photocurrent strength and the signal-to-noise ratio have been carefully characterized and discussed. A significant shift in the cut off wavelength of the BNNSs based photodetectors was observed suggesting a band gap reduction as a result of the BNNSs’ collective structure. The newly designed photodetector presented exceptional properties: a high sensitivity to weak intensities of radiation in both UVC and UVB range while remaining visible-blind, and a high signal-to-noise ratio operation even at temperatures as high as 400 °C. In addition, the BNNSs based photodetector exhibited potential for self-powered operation.
Highlights
Solar-blind UV photodetectors have attracted intense attention because of a variety of potential applications in the fields of military defense, environmental monitoring and ultraviolet astronomy
Many results on the synthesis of low dimensional (LD) boron nitride materials have been reported in recent years but most rely on special CVD technique which requires extremely high temperatures (>1000 °C) and ultrahigh vacuum (UHV) for the production of boron nitride nanosheets (BNNSs)
We reported on the application of pulsed laser plasma deposition (PLPD) at low substrate temperatures for the synthesis of BNNSs36 and their potential use as Schottky diodes[39], gas sensors[40] and deep UV detectors[41,42,43]
Summary
Manuel Rivera[1], Rafael Velázquez[1], Ali Aldalbahi2,*, Andrew F. The development of innovative UV photodetectors has experienced considerable progress[1,2] This is partially attributed to newly developed techniques employed in the growth of high-quality wide-band-gap semiconductors such as crystalline gallium nitride (GaN)[3,4,5], aluminum nitride (AlN)[6], silicon carbide (SiC)[7,8], diamond[9,10], zinc oxide[11,12], titanium oxide[13] and other wide-band-gap semiconducting materials and films. Large amounts of high-quality BNNSs have been obtained with improved BNNS-substrate properties, with which high performance deep UV detectors with large cut-off wavelength shift, high thermal resistance and low energy consumption have been fabricated. To the best of our knowledge, this is the first time a material capable of broadband UV sensing in extreme high temperature conditions while requiring almost no energy to operate is reported
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