Abstract
To solve the problem of the low on-state current in p-type tunnel field-effect transistors (p-TFETs), this paper analyzes the mechanism of adjusting the tunneling current of a TFET device determined by studying the influence of the peak position of ion implantation on the potential of the p-TFET device surface and the width of the tunneling barrier. Doping-regulated silicon-based high on-state p-TFET devices are designed and fabricated, and the test results show that the on-state current of the fabricated devices can be increased by about two orders of magnitude compared with the current of other devices with the same structure. This method provides a new idea for the realization of high on-state current TFET devices.
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