Abstract
High-speed SiGe film is promising use in photonics and electronics technologies continue to replace Si-based devices. High mobility Si0.15 Ge0.85 film on sapphire was grown at 890 °C substrate temperature by using a conventional magnetron sputtering system within the heteroepitaxy framework. 890 °C substrate temperate is impractical for commercial device manufacturing due to long thermal soak, loading time, and costly process. To leverage the practical SiGe device applications, the Molten Target Sputtering (MTS) techniques is developed. The MTS is an economic and robust process from high flux density and liquid-state of molecules benefits. At 500 °C, the lowest substrate temperature, high mobility Si0.15Ge0.85 film with continues morphology and 99.7% majority-orientation were grown by using the MTS. The hall electron mobilities of the Si0.15Ge0.85 grown at 500 °C are 456 cm2V−1s−1 and 123.9 cm2V−1s−1 at 5.59 × 1018 cm3 and 3.5 × 1020 cm3 carrier concentration at 22.38 °C, respectively. The values are 550% higher hall electron mobilities than that of Si at equivalent carrier concentration and temperatures. We envision that the MTS is beneficial for the heteroepitaxy framework film growth that requires high substrate temperature to overcome the large lattice parameter mismatch between film and substrate.
Highlights
The demand for high-tech devices such as smart phones, tablet PCs, security systems, and other advanced electronic hardware relies on high-speed processors for computing
The high substrate temperature is impractical for commercial device application as is a costly process from long thermal soak times and often not repeatable in quality to produce due to a difficult of a thermally uniform wafer[7,11,12,13]
Over 850 °C substrate temperature on a conventional magnetron sputtering is required for 99% single crystal and continuous morphology Si0.15Ge0.85 thin film on c-plane sapphire substrate
Summary
High-speed SiGe film is promising use in photonics and electronics technologies continue to replace Si-based devices. Within the super-heteroepitaxial framework, 850 °C substrate temperature and 200 W magnetron gun power on a conventional magnetron sputtering are required for 99% single crystal Si0.15Ge0.85 growth on c-plane sapphire substrate and high mobility[6,7,8,9]. Low temperature process for a single crystal Si0.15Ge0.85 film growth is feasible when a thin film deposition system could melt the Ge target before reach to the high substrate temperate and provides a high deposition rate of molecules than the convention magnetron sputtering. From the MTS benefits of the molten Ge before reach to the substrate and high flux density of molecules, low temperature process for single crystal Si0.15Ge0.85 growth with high mobility is feasible. We choose SiGe because both high substrate temperature and high flux density of molecules are the critical parameters for high quality and single crystal film growth (Supporting Information 1)
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