Abstract
Antimonide-based p-channel HFETs with a 0.25 µm gate length have been fabricated with an InAlSb/AlGaSb barrier and a strained In0.41Ga0.59Sb quantum well channel. The modulation-doped material exhibits a Hall mobility of 1020 cm2/V s and a sheet density of 1.6×1012 cm−2. The devices have a maximum DC transconductance of 133 mS/mm and an fT and fmax of 15 and 27 GHz, respectively. These values are the highest reported to date for this material system.
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