Abstract
High-performance transparent and low-process-temperature p-type devices are essential for portable and ‘invisible’ electronics. In this work, high-performance p-channel copper iodide (CuI) thin-film transistors (TFTs) with a bottom-gate structure are achieved via replacing traditional SiO2 dielectric with Chitosan (CS, a kind of solid polymer electrolytes), with the threshold voltage down to −0.35 V, field-effect mobility (μFE) up to 60 cm2V−1s−1 and on/off current ratio (Ion/Ioff) beyond 103. The CuI films spin-coated on CS-dielectrics in the air with high humidity have smoother surface morphology, tinier grains, higher packing density and hence a higher μFE, in sharp contrast with the SiO2 case. In addition, the CuI films on CS-dielectrics demonstrate a work function ∼ 0.1 eV lower than that on SiO2, which implies a smaller hole concentration and higher Ion/Ioff. And the low process temperature (<50 °C) facilitates the achievement of flexible and transparent CuI TFTs with μFE and Ion/Ioff comparable to those on rigid InSnO (ITO) glass. Furthermore, complementary inverters composed of p-type CuI and n-type ITO TFTs are demonstrated with clear inverting characteristics and voltage gain of over 20.
Published Version
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