Abstract
We propose crystalline ZnSnO3 as a new channel material for field-effect transistors. By molecular-beam epitaxy on LiNbO3(0001) substrates, we synthesized films of ZnSnO3, which crystallizes in the LiNbO3-type polar structure. Field-effect transistors on ZnSnO3 exhibit n-type operation with field-effect mobility of as high as 45 cm2V−1s−1 at room temperature. Systematic examination of the transistor operation for channels with different Zn/Sn compositional ratios revealed that the observed high-mobility reflects the nature of stoichiometric ZnSnO3 phase. Moreover, we found an indication of coupling of transistor characteristics with intrinsic spontaneous polarization in ZnSnO3, potentially leading to a distinct type of polarization-induced conduction.
Highlights
The successful development of In-Ga-Zn-O field-effect transistors[1] (FETs) has given a boost to the continuing search for new transparent oxide semiconductors
High-mobility field-effect transistor based on crystalline ZnSnO3 thin films
Crystalline phases are known to exist at certain stoichiometric compositions, but attention has been paid to search for optimal compositions in their amorphous alloy phase diagrams towards high-performance FETs, rather than properties of specific phases
Summary
The successful development of In-Ga-Zn-O field-effect transistors[1] (FETs) has given a boost to the continuing search for new transparent oxide semiconductors. High-mobility field-effect transistor based on crystalline ZnSnO3 thin films
Sign-in/Register to view highlights & summary Sign-in/Register to access full text options 
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Schedule a callDisclaimer: All third-party content on this website/platform is and will remain the property of their respective owners and is provided on "as is" basis without any warranties, express or implied. Use of third-party content does not indicate any affiliation, sponsorship with or endorsement by them. Any references to third-party content is to identify the corresponding services and shall be considered fair use under The CopyrightLaw.
