Abstract

Nickel oxide nanoplates were continuously synthesized by hydrothermalreaction using a flow-type reactor. The products had a thickness of ∼ 10 nm and a lateral size of 100–500 nm. The nanoplates were purified and drop-cast on a bottom-gatesubstrate and used as the channel material in a field-effect transistor after annealing at300 °C. TheId–Vd profile showed that the NiO nanoplates worked as the p-type semiconductor. This resultsuggests that various electronic devices can be prepared using metal oxide nanomaterials,which exhibit various properties including magnetism, ferroelectronics and catalysis as wellas stability and safety in air and water.

Talk to us

Join us for a 30 min session where you can share your feedback and ask us any queries you have

Schedule a call

Disclaimer: All third-party content on this website/platform is and will remain the property of their respective owners and is provided on "as is" basis without any warranties, express or implied. Use of third-party content does not indicate any affiliation, sponsorship with or endorsement by them. Any references to third-party content is to identify the corresponding services and shall be considered fair use under The CopyrightLaw.