High-mobility CMOS transistors fabricated on very thin SOS films

Abstract

It is reported that the mobility of CMOS transistors fabricated on very thin silicon-on-sapphire (SOS) films is a function of the film growth rate. Transistors with mobilities nearly as high as those obtained on 1.0- mu m-thick films have been fabricated on SOS films 0.2 mu m thick that have been grown at growth rates above 4 mu m/min. >