Abstract
Raman spectroscopy technique has been performed to investigate the stress induced in as-grown silicon-on-sapphire (SOS), solid-phase-epitaxy (SPE) re-grown SOS, and Si/γ-Al 2O 3/Si double-heteroepitaxial thin films. It was demonstrated that the residual stress in SOS film, arising from mismatch and difference of thermal expansion coefficient between silicon and sapphire, was reduced efficiently by SPE process, and that the stress in Si/γ-Al 2O 3/Si thin film is much smaller than that of as-grown SOS and SPE upgraded SOS films. The stress decrease for double heteroepitaxial film Si/γ-Al 2O 3/Si mainly arises from the smaller lattice mismatching of 2.4% between silicon top layer and the γ-Al 2O 3/Si epitaxial composite substrate, comparing with the large lattice mismatch of 13% for SOS films. It indicated that γ-Al 2O 3/Si as a silicon-based epitaxial substrate benefits for reducing the residual stress for further growth of silicon layer, compared with on bulk sapphire substrate.
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