High mechanical reliability of back-ground GaAs LSI chips with low thermal resistance : Masanori Nishiguchi, Atsushi Niki, Noboru Goto, Mitsuaki Fujihira and Hideaki Nishizawa. IEEE Trans. Compon. Hybrids mfg Technol.14(4), 848 (December 1991)

Abstract

We report the first fabrication of a GaSb n-channel modulation-doped field-effect transistor (MODFET) grown by molecular beam epitaxy. The modulation-doped structure exhibits a room temperature Hall mobility of 3140 cm2 V−1 s−1 and 77 K value of 16000 cm2 V−1 s−1, with corresponding sheet carrier densities of 1.3 × 1012 cm−2 and 1.2 × 1012 cm−2. Devices with 1 μm gate length yield transconductances of 180 mS mm−1 and output of 5 mS mm−1 at 85 K. The device characteristics indicate that electron transport in the channel occurs primarily via the L-valley of GaSb above 85 K. The effective electron saturation velocity is estimated to be 0.9 × 107 cm s−1. Calculations show that a complementary circuit consisting of GaSb n- and p-channel MODFETs can provide at least two times improvement in performance over AlGaAsGaAs complementary circuits.