Abstract
We present transport properties of AlGaN/GaN heterostructures grown over high-pressure bulk GaN substrates. The experimental results include the conductivity tensor measurements in a magnetic field up to 23 T in a wide temperature range 2 K–300 K for Hall bar samples. The room temperature high field data allow us to clearly separate contributions of a parasitic parallel conduction from 2DEG conduction in all investigated heterostructures. The room temperature mobility limit for 2D electrons in GaN/AlGaN heterojunctions grown on defect free GaN bulk substrates is around 2400 cm2/Vs. The Quantum Hall Effect studies are performed in the magnetic fields up to 23 T and temperatures between 1.6 K and 15 K This high magnetic field in combination with very high mobility (over 60000 cm2/Vs) in the sample grown on the bulk GaN substrate allow us to determine the activation energy in cyclotron gap from longitudinal magnetoresistance. (© 2005 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim)
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