Abstract
In this paper we review some advances in High-κ characterization by means of capacitance measurement in the radio-frequency regime (widely known as RFCV). Firstly, we present a robust methodology for the gate impedance parameter extraction in short channel leaky devices, based on measurements from DC to the GHz range and fitting with a robust weighted algorithm. Secondly, we will present a novel RFCV technique which pushes the conventional split-CV measurement to the MHz range. This RF-split-CV is based on measuring with a 2-port network analyzer, as opposed to the conventional technique which uses a 1 port LCR meter. This improved technique is the basis for accurate mobility extraction as studied in the final part of the paper. This methodology takes parasitics fully into account: the RF-split-CV curves obtained are used for the accurate metallurgical channel length extraction. Combination of these Lmet results with conventional Ids Vgs curves measured in the linear regime leads to the source and drain resistance calculation. After all these corrections have been performed, the mobility is finally calculated.
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