High internal and external quantum efficiency InGaN/GaN solar cells

Abstract

High internal and external quantum efficiency GaN/InGaN solar cells are demonstrated. The internal quantum efficiency was assessed through the combination of absorption and external quantum efficiency measurements. The measured internal quantum efficiency, as high as 97%, revealed an efficient conversion of absorbed photons into electrons and holes and an efficient transport of these carriers outside the device. Improved light incoupling into the solar cells was achieved by texturing the surface. A peak external quantum efficiency of 72%, a fill factor of 79%, a short-circuit current density of 1.06 mA/cm2, and an open circuit voltage of 1.89 V were achieved under 1 sun air-mass 1.5 global spectrum illumination conditions.