High Intensity Radical Beam Source ad Thin Film Synthesis.

Abstract

Plasma assisted deposition methods have been widely used so far to synthesize varieties of thin films. However, charged particles such as electrons and ions, which are inevitably included in plasma, hit surfaces of thin film while the films are being deposited and deteriorate the characteristics of the films. In this article we first describe our results concerning titanium oxides deposition by a “pulsed beam deposition method” and show that active oxygen species are necessary to synthesize completely oxidized titanium oxide thin films. Subsequently, we introduce a high intensity radical beam source which does not emit charged particles and its performance with a review of radical beam sources and methods to determine the intensity of radical beam. Finally, we conclude with some examples of the application of the radical beam source to the synthesis of ceramic films.